Seoul – September 12, 2026 -- DB HiTek has completed reliability qualification for its 1,200-V silicon carbide (SiC) MOSFET process on 8-inch (200mm) wafers, establishing what the company calls the world's first complete 8-inch SiC foundry process flow. The South Korean pure-play foundry targets mass production in 2027.
DB HiTek moves ahead of industry shift from 6-inch to 8-inch SiC wafers
SiC is a next-generation power semiconductor material offering superior performance over silicon in high-temperature and high-voltage environments, making it suited for electric vehicles, renewable energy equipment and industrial power electronics. While 6-inch wafers currently dominate the SiC market, major global chipmakers are transitioning to 8-inch wafers to improve production efficiency and cost competitiveness.
Second-generation PDK achieves 2.5 mΩ·cm2 specific on-resistance
DB HiTek is supplying customers with process design kits (PDKs) for its first- and second-generation 1,200-V SiC MOSFET processes. The second-generation process, which has completed reliability qualification, achieves a specific on-resistance (Rsp) of 2.5 mΩ·cm2 or less and a threshold voltage (Vth) of 3V or more at a gate-on voltage (Vgs(on)) of 18V.
A third-generation PDK is scheduled for release in November. That process is currently under qualification and targets a specific on-resistance of 2.3 mΩ·cm2 or less at the same 18V gate-on voltage, along with a short-circuit withstand time (SCWT) of at least 2.5 μs within the short-circuit safe operating area (SCSOA).
Customers gain more than one year in product development time
DB HiTek says use of its PDKs allows customers to reduce resource requirements in early development stages, accelerate prototype fabrication, and cut product development time by more than one year.
Company targets Q2 2027 for full customer access
DB HiTek plans to complete process preparations in the third quarter of this year and grant access to long-standing customers first. The company intends to open the service to all customers starting in the second quarter of 2027, with the goal of accelerating mass-production readiness and strengthening its competitiveness in next-generation power semiconductor foundry services.